• 专利标题:   Method for patterning three-dimensional graphene nano-wall using laser etching machine, involves recording drawn graphic file on laser etching machine table, and performing three-dimensional graphene nano-wall patterning process.
  • 专利号:   CN106206268-A
  • 发明人:   YU Y, SUN T, YANG J, WEI D, SHI H
  • 专利权人:   CHINESE ACAD SCI CHONGQING GREEN INTEL
  • 国际专利分类:   B82Y030/00, H01L021/268
  • 专利详细信息:   CN106206268-A 07 Dec 2016 H01L-021/268 201703 Pages: 6 Chinese
  • 申请详细信息:   CN106206268-A CN10582047 22 Jul 2016
  • 优先权号:   CN10582047

▎ 摘  要

NOVELTY - The method involves connecting a three-dimensional graphene nano-wall on a substrate (1). A laser etching machine-readable graphics file is obtained (2). The three-dimensional graphene nano-wall is fixed (3) on a laser etching machine table. A drawn graphic file is recorded (4) on the laser etching machine table. Three-dimensional graphene nano-wall patterning process is performed (6). The three-dimensional graphene nano-wall is coated on flexible material. The flexible material is contained with polymethylmethacrylate and polyurethane elastomer material. USE - Method for patterning a three-dimensional graphene nano-wall using laser etching machine. ADVANTAGE - The method enables realizing three-dimensional graphene nano-wall patterning process in a simple manner, reducing production cost and increasing yield. DESCRIPTION OF DRAWING(S) - The drawing shows a flow diagram illustrating a method for patterning a three-dimensional graphene nano-wall using laser etching machine. '(Drawing includes non-English language text)' Step for connecting three-dimensional graphene nano-wall on substrate (1) Step for obtaining laser etching machine-readable graphics file (2) Step for fixing three-dimensional graphene nano-wall on laser etching machine table (3) Step for recording drawn graphic file on laser etching machine table (4) Step for performing three-dimensional graphene nano-wall patterning process (6)