• 专利标题:   Manufacture of thermal sensor involves transferring reduction graphene intermediate solution to substrate in which electrode pattern is formed with assembly membrane.
  • 专利号:   KR1575012-B1
  • 发明人:   AHN S I, KUK J K, DONG G K, HAN G J
  • 专利权人:   UNIV SILLA
  • 国际专利分类:   B05D001/02, C01B031/04, C23C026/00, G01K007/22
  • 专利详细信息:   KR1575012-B1 08 Dec 2015 G01K-007/22 201616 Pages: 14 English
  • 申请详细信息:   KR1575012-B1 KR162471 20 Nov 2014
  • 优先权号:   KR162471

▎ 摘  要

NOVELTY - Manufacture of temperature sensor involves forming an electrode pattern on a substrate, coating the electrode pattern in upper portion of reduction graphene thin film, depositing a passivation layer on upper portion of reduction graphene thin film, transferring the reduction graphene intermediate solution to the substrate in which the electrode pattern is formed with the assembly membrane, and forming the assembly membrane in the upper portion of substrate in which the electrode pattern is formed. USE - Manufacture of thermal sensor (claimed).