▎ 摘　　要

NOVELTY - Manufacturing substrate material comprises (i) cutting sapphire crystal, forming sapphire plate blank; (ii) grinding sapphire sheet blank to form sapphire sheet semifinished product; and (iii) chamfering sapphire sheet semi-finished product, annealing and polishing to obtain sapphire sheet product suitable for graphene growth. USE - The substrate material is useful for graphene growth (claimed). ADVANTAGE - The substrate material: can obtain a through yield of over 97%; has uniformity of the epitaxial wavelength can be converges to std to more than 1.5 and the ratio can reach more than 95%; and can avoid the occurrence of unstable quality due to local deformation or full-area deformation of the substrate when growing graphene. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for substrate material suitable for graphene growth, is prepared by the method, the crystal orientation angle (C to M) of the substrate material is 0.23 plus minus 0.03 degrees C (degrees), the crystal orientation angle (C to A) is 0 plus minus 0.03 degrees (degrees), the thickness is 650 plus minus 5 mu m, the flatness is less than or equal to 4 mu m, the area flatness is less than or equal to 1 mu m, warping degree is less than or equal to 8 mu m, the bending degree is (-2, -4) mu m, surface amplitude is 200 plus minus 50 mu m and roughness (FS: greater than or equal to 0.0002 mu m; BS: 0.7 plus minus 0.1 mu m).