▎ 摘　　要

NOVELTY - The interconnection (17) has an insulating film including an interconnection trench (30), in which a catalyst film (15) is arranged to fill a portion of the interconnection trench. A graphene layer (16) is formed on the catalyst film in the interconnection trench, and includes graphene sheets stacked in a direction perpendicular to bottom surface of the interconnection trench. A catalyst underlying film (14) is formed on side surfaces and the bottom surface of the interconnection trench. USE - Graphene interconnection for use in an interconnection layer of a large scale integration (LSI) device. ADVANTAGE - The graphene sheet is formed by multistage processing so as to achieve low formation temperature and high quality or uniform growth and to reduce upper limit of process temperature as low as possible, so that overall characteristics of the LSI device can be improved by decreasing formation temperature of the graphene sheet, thus facilitating electrical conduction, and providing an ability to implement low-resistance interconnection. DETAILED DESCRIPTION - The catalyst film comprises a film made of a metal selected from a group consisting of cobalt, nickel, iron and copper. An INDEPENDENT CLAIM is also included for a method for manufacturing a graphene interconnection. DESCRIPTION OF DRAWING(S) - The drawing shows a cross-sectional view of a graphene interconnection. Catalyst underlying film (14) Catalyst film (15) Graphene layer (16) Graphene interconnection (17) Interconnection trench (30)