▎ 摘　　要

NOVELTY - A defect state graphene/semiconductor heterojunction photodetector comprises a two-layered structure comprising one layer which is a semiconductor layer, and the other layer which is a defect state graphene layer. The defect state graphene layer is attached to the semiconductor layer. The defect state graphene layer has a thickness of 10-100 nm, and the defect state graphene layer contains 1-40% defect state sp3/sp2 carbon. The defect state graphene layer is prepared by (1) obtaining a nano-thick graphene oxide film by suction filtration on the nanoporous anodic aluminum oxide (AAO) substrate, and supporting the graphene oxide film on the AAO substrate, (2) loading the AAO substrate with the graphene oxide film which is chemically reduced at 60-120 degrees C for 6-12 hours to obtain the AAO substrate loaded with the reduced graphene oxide film. USE - Defect state graphene/semiconductor heterojunction photodetector. ADVANTAGE - The defect state graphene/semiconductor heterojunction photodetector is capable of improving the uniformity of the film, stability of the device by controlling the sintering process, increasing the scattering of electrons to phonons causing thermal effects, and thereby improving the light response, and increasing the magnitude of the external quantum free efficiency. DETAILED DESCRIPTION - A defect state graphene/semiconductor heterojunction photodetector comprises a two-layered structure comprising one layer which is a semiconductor layer, and the other layer which is a defect state graphene layer. The defect state graphene layer is attached to the semiconductor layer. The defect state graphene layer has a thickness of 10-100 nm, and the defect state graphene layer contains 1-40% defect state sp3/sp2 carbon. The defect state graphene layer is prepared by (1) obtaining a nano-thick graphene oxide film by suction filtration on the nanoporous anodic aluminum oxide (AAO) substrate, and supporting the graphene oxide film on the AAO substrate, (2) loading the AAO substrate with the graphene oxide film which is chemically reduced at 60-120 degrees C for 6-12 hours to obtain the AAO substrate loaded with the reduced graphene oxide film, (3) supporting the AAO substrate and peeling off the reduced graphene oxide film by camphor at 120-200 degrees C, and removing the camphor at 60 degrees C to obtain a reduced graphene oxide film, and (4) sintering the reduced graphene oxide film obtained in the step (3) at 1600-2000 degrees C for 1 minute to 8 hours to prepare a defect state nano-thickness graphene film.