▎ 摘　　要

NOVELTY - The mask (34) has hydrogen, oxygen and a two-dimensional (2D) material layer (32) with a layered crystalline structure, where a content of the oxygen is about 4 atomic percentage or less, density of the mask is in a range from about 2.0 gram per centimeter cube to about 2.2 gram per centimeter cube, the content of hydrogen is about 10 atomic percentage or less. The 2D material layer comprises one of a carbon structure and a non-carbon structure. The carbon structure includes graphene sheets. The 2D material layer comprises a doped impurity. USE - Two-dimensional material hard mask for manufacturing electronic device e.g. capacitor, transistor, and optical device. ADVANTAGE - The mask having a relatively high etch resistance, thus providing a relatively high etch selectivity. The mask improves etch resistance and the etch selectivity of the first and second masks when compare with third mask. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are also included for the following: (1) a method for forming a hard mask (2) a method for forming a material layer pattern. DESCRIPTION OF DRAWING(S) - The drawing shows a cross-sectional view of method for manufacturing a material layer pattern using a 2D material hard mask. Substrate (30) 2D Material layer (32) Two-dimensional material hard mask (34)