▎ 摘　　要

NOVELTY - Preparing gallium nitride/aluminium gallium nitride (GaN/AlGaN) hetero junction material based on single crystal diamond substrate involves selecting single crystal diamond substrate. The graphene layer is coated on the upper surface of the single crystal diamond substrate. The aluminum nitride (AlN) nucleation layer is coated on the upper surface of the graphene layer. The low-temperature GaN transition layer is coated on the upper surface of the AlN nucleation layer. The GaN buffer layer is coated on the upper surface of the low-temperature GaN transition layer. The AlGaN barrier layer is coated on the upper surface of the GaN buffer layer to form GaN/AlGaN hetero junction material based on a single crystal diamond substrate. USE - Method for preparing gallium nitride/aluminium gallium nitride (GaN/AlGaN) heterojunction material based on single crystal diamond substrate. ADVANTAGE - The method enables to prepare gallium nitride/aluminium gallium nitride (GaN/AlGaN) hetero junction material based on single crystal diamond substrate that simplifies the difficulty of technique, and improves the quality of the hetero junction material.