• 专利标题:   Reducing resistivity in graphene layer, comprises forming single layer graphene chromium oxide chloride heterostructure.
  • 专利号:   CN114296577-A
  • 发明人:   ZHANG T, YANG K, GAO X, HAN Z
  • 专利权人:   UNIV SHANXI
  • 国际专利分类:   B82Y015/00, B82Y040/00, C01B032/19, C01G037/00, G06F003/045
  • 专利详细信息:   CN114296577-A 08 Apr 2022 G06F-003/045 202247 Chinese
  • 申请详细信息:   CN114296577-A CN11604295 25 Dec 2021
  • 优先权号:   CN11604295

▎ 摘  要

NOVELTY - Reducing resistivity in graphene layer comprises forming a single-layer graphene chromium chloride heterostructure in a graphene layer. USE - The method involves forming a single layer graphene CrOCl heterostructure, where the single layer graphene heterostructure is obtained by manually stacking hexagonal boron nitride, single layer graphene, and CrOCl. ADVANTAGE - The method has simple technique, using the novel effect of interlayer coupling which can simply obtain single layer of graphene-high conductivity, to develop ultra-thin light weight in the future, low resistance touch screen provides more excellent material selection. DESCRIPTION OF DRAWING(S) - The drawing shows a flow chart of the preparation of a single-layer graphene heterostructure. (Drawing includes non-English language text).