▎ 摘　　要

NOVELTY - The utility model claims a near infrared photoelectric detector, comprising: an insulating substrate, an electrode, a graphene layer and a tin-doped molybdenum oxide nano film; wherein the electrode comprises a positive electrode and a negative electrode; the positive electrode and the negative electrode are oppositely arranged on the insulating substrate; the graphene layer is set on the positive electrode and the negative electrode; The tin-doped molybdenum oxide nano-film is laminated on the graphene layer. The near infrared photoelectric detector comprises a laminated structure formed by graphene layer and tin-doped molybdenum oxide nano film, which can reduce the forbidden band width of molybdenum oxide by using tin intercalation molybdenum oxide, so as to realize efficient absorption of near infrared photon; transferring the photo-generated carrier to the graphene layer; then using graphene superhigh mobility to transmit the photo-generated carrier to the two end electrodes, so as to realize high response rate of near infrared band light.