▎ 摘　　要

NOVELTY - Preparing flexible graphite-based silicon nanowire heterojunction comprises e.g. (i) covering graphene substrate with about 2 nm thick gold on the CVD furnace and turn on the mechanical pump to evacuate, (ii) evacuating the pressure in the CVD furnace to l0-1Pa using mechanical pump, turn on the molecular pump, and evacuating the furnace air pressure to lx 10-4 Pa, (iii) turn off the molecular pump, and open the argon gas valve, adjust the gas flow rate to about 0.1 slm, adjust the mechanical pump knob, so that the pressure of the CVD furnace chamber of 1.33x 104 Pa, turning on heating system, and heating at 500 degrees C at a rate of 35 degrees C/minute, (iv) maintaining at 500 degrees C for 10 minutes and passing 10 sccm silicon tetrahydride, and (v) closing the silicon tetrahydride gas valve after 10 minutes of growth, and naturally cooling the CVD furnace to room temperature under protection of argon to obtain graphene-based silicon nanowire heterojunction. USE - The method is useful for preparing flexible graphite-based silicon nanowire heterojunction. ADVANTAGE - The method: achieves the overall transfer of graphene-based silicon nanowire heterojunction. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for transferring flexible graphene-based silicon nanowire heterojunction, comprising (i) adding graphene-based silicon nanowire heterojunction into the homogenizer, adding poly(methyl methacrylate) solution for spin coating, so that the poly(methyl methacrylate) solution evenly covers the silicon nanowires, (ii) placing the spin-coated sample from step (i) on a 120 degrees C hot plate for 20 minutes to cure poly(methyl methacrylate), (iii) configuring the polydimethylsiloxane solution, and evenly applying the polydimethylsiloxane solution on the surface of the sample, and then placing sample in a 95 degrees C oven for 40 minutes and curing the polydimethylsiloxane, (iv) cutting redundant polydimethylsiloxane, and then adding into 1 mol/l sodium hydroxide solution to etching the silicon dioxide in the substrate, (v) cleaning the etched sample using deionized water and peeling the graphene-based silicon nanowire heterojunction covered with polydimethylsiloxane/poly(methyl methacrylate) from the silicon dioxide/silicon substrate, and (vi) transferring graphene-based silicon nanowire heterojunction to a flexible substrate to complete the transfer process.