• 专利标题:   Preparation of low temperature peeling-type modified graphene, involves inserting alkali metal ammonia in formation of ammonia ions into graphene layer and reacting ammonia electrons and modified group at defect site of graphene layer.
  • 专利号:   CN105883790-A
  • 发明人:   HUANG J, WANG B, ZHANG J, WU X
  • 专利权人:   UNIV TONGJI
  • 国际专利分类:   C01B031/04, H01M004/36, H01M004/58, H01M004/587
  • 专利详细信息:   CN105883790-A 24 Aug 2016 C01B-031/04 201668 Pages: 9 Chinese
  • 申请详细信息:   CN105883790-A CN10357349 26 May 2016
  • 优先权号:   CN10357349

▎ 摘  要

NOVELTY - Preparation of low temperature peeling-type modified graphene, involves inserting alkali metal ammonia in formation of ammonia ions into the graphene layer and separating graphite layer, to obtain thin layer of graphene, reacting ammonia electrons and modified group at the defect site of the graphene layer, to obtain modified graphene. USE - Preparation of low temperature peeling-type modified graphene (claimed). ADVANTAGE - The modified graphene is thinner and more complete in structure. The dispersion of modified graphene in water and N-Methyl-2-pyrrolidone is improved. The modified graphene is combined with the metal oxide and the transition metal disulfide to obtain the structure-stabilized composite material.