• 专利标题:   Graphene epitaxial growth device comprises e.g. gas transportation system, epitaxial growth reaction chamber system, tail gas processing system, safety support system, cooling system, automatic control system utilized for supplying gas.
  • 专利号:   CN107904659-A
  • 发明人:   GUAN H
  • 专利权人:   UNIV NORTHWESTERN POLYTECHNICAL
  • 国际专利分类:   C30B029/02, C30B025/02, C30B025/18, C30B025/14, C30B025/10
  • 专利详细信息:   CN107904659-A 13 Apr 2018 C30B-029/02 201832 Pages: 15 Chinese
  • 申请详细信息:   CN107904659-A CN11184193 23 Nov 2017
  • 优先权号:   CN11184193

▎ 摘  要

NOVELTY - Graphene epitaxial growth device comprises gas transportation system (1), epitaxial growth reaction chamber system (2), tail gas processing system (3), a safety support system (4), a cooling system (5). The automatic control system utilized for supplying source gas to epitaxial growth reaction chamber system through pipeline which is set with gas transport system. The safety control system and tail gas processing system is set with a cooling system. The automatic control system electrically set with tail gas processing system which is set with epitaxial growth reaction chamber system. USE - Used as graphene epitaxial growth device. ADVANTAGE - The graphene epitaxial growth device reduces mutual interference silicone carbide, and amorphous carbon reconstruction process in decomposition process, and reaction process is clear, and has clear mechanism. DETAILED DESCRIPTION - Graphene epitaxial growth device comprises a gas transportation system (1), a epitaxial growth reaction chamber system (2), a tail gas processing system (3), a safety support system (4), a cooling system (5). The automatic control system is utilized for supplying source gas to epitaxial growth reaction chamber system through pipeline which is set with gas transport system. The safety control system and tail gas processing system is set with a cooling system. The automatic control system is electrically set with tail gas processing system which is set with epitaxial growth reaction chamber system through pipeline. The cooling system is set with epitaxial growth reaction chamber system, a tail gas processing system through pipeline. The automatic control system is set with gas transportation system and epitaxial growth reaction chamber system further electrically set with source gas. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic representation of the graphene epitaxial growth device. Gas transportation system (1) Epitaxial growth reaction chamber system (2) Tail gas processing system (3) Safety support system (4) Cooling system (5)