▎ 摘　　要

NOVELTY - The method involves providing an insulating substrate (802) including an insulating layer. A hydrophobic layer (402) is formed over the insulating layer. A graphene layer (502) is transferred onto the hydrophobic layer. The transferred graphene layer is formed with the primary carrier mobility. An annealing process is performed, after transferring the graphene layer. The annealed graphene layer is formed with a secondary carrier mobility greater than the transferred carrier mobility. USE - Method for forming dual-gated graphene device such as graphene transistor. ADVANTAGE - The quality and/or performance of subsequently fabricated graphene-based devices are improved, and the carrier mobility is improved. DESCRIPTION OF DRAWING(S) - The drawing shows a cross-sectional view of the dual-gated graphene device. Hydrophobic layer (402) Graphene layer (502) Dielectric layer (702) Top-gated graphene device (800) Insulating substrate (802)