• 专利标题:   Preparation of silicon carbide pyrolytic graphene, involves cleaning silicon carbide substrate, placing in annealing frame, and growing graphene on surface of substrate by silicon carbide high temperature thermal decomposition method.
  • 专利号:   CN107954418-A
  • 发明人:   YUAN Z, LIU X
  • 专利权人:   BEIJING HUAJIN CHUANGWEI ELECTRONIC CO
  • 国际专利分类:   C01B032/188
  • 专利详细信息:   CN107954418-A 24 Apr 2018 C01B-032/188 201833 Pages: 6 Chinese
  • 申请详细信息:   CN107954418-A CN11474197 29 Dec 2017
  • 优先权号:   CN11474197

▎ 摘  要

NOVELTY - The preparation method of silicon carbide pyrolytic graphene involves (1) cleaning a silicon carbide substrate, and placing in an annealing frame, and (2) growing graphene with uniform thickness on a surface of the silicon carbide substrate by silicon carbide high temperature thermal decomposition method. USE - Preparation method of silicon carbide pyrolytic graphene. ADVANTAGE - The method enables preparation of silicon carbide pyrolytic graphene with uniform thickness and excellent repeatability, by simple, economical and industrial process.