▎ 摘　　要

NOVELTY - The detector has a gallium oxide crystal substrate (100), H-type boron nitride (101), a graphene layer (102), a first ohmic contact electrode (110) and a second ohmic contact electrode (120). The first ohmic contact electrode is grown on a first side of the gallium oxide crystal substrate. The H-type boron nitride is grown on the second side of the gallium oxide crystal substrate. The graphene layer is grown on a surface of the H-type boron nitride that is not in contact with the gallium oxide crystal substrate. The second ohmic contact electrode is grown on a surface of the graphene layer that is not in contact with the H-type boron nitride. USE - Gallium oxide-based UV detector used in space astronomical telescopes, military missile warning, non-line-of-sight security optical communication, sea fogging pilotage, high voltage power monitoring, field fire remote sensing and biochemical detection. ADVANTAGE - The detector can effectively reduce the dark current in the device and significantly improve the sensitivity and response speed of the ultraviolet response. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view showing the MIS structure of an UV detector. Gallium oxide crystal substrate (100) H-type boron nitride (101) Graphene layer (102) First ohmic contact electrode (110) Second ohmic contact electrode (120)