• 专利标题:   Manufacture of graphene used for forming graphene sheet, involves supplying carbon source-containing gas to metal catalyst layer for graphene growth, and forming graphene by inductively coupled plasma-chemical vapor deposition.
  • 专利号:   WO2012008789-A2, KR2012007998-A, WO2012008789-A9, WO2012008789-A3, JP2013530124-W, US2013187097-A1, KR1312454-B1, CN103140439-A, JP5705315-B2, US9371234-B2, CN103140439-B
  • 发明人:   AHN J, BAE S K, HONG B H, JANG H, JUNG M H, KIM S J, LEE Y, YOO J B, AHN J H, LIU Z, BAE S, HONG B, LI R, JUNG M, KIM S
  • 专利权人:   SAMSUNG TECHWIN CO LTD, UNIV SUNGKYUNKWAN FOUND CORP COLLABORATI, SAMSUNG TECHWIN CO LTD, UNIV SUNGKYUNKWAN FOUND CORP COLLABORATI, GRAPHENE SQUARE INC, UNIV SUNGKYUNKWAN FOUND, GRAPHENE SQUARE INC, SAMSUNG TECHWIN CO LTD, HANWHA TECHWIN CO LTD, HANWHA TECHWIN CO LTD
  • 国际专利分类:   C01B031/02, C23C016/26, C23C016/50, C01B031/04, B82Y030/00, B82Y040/00, C23C016/01, H01B001/04, C01B032/186
  • 专利详细信息:   WO2012008789-A2 19 Jan 2012 C01B-031/02 201211 Pages: 30
  • 申请详细信息:   WO2012008789-A2 WOKR005213 15 Jul 2011
  • 优先权号:   KR068634

▎ 摘  要

NOVELTY - A carbon source-containing gas (24) is supplied to a metal catalytic layer (22) for graphene growth on a substrate and graphene (23) is formed at less than 500 degrees C by inductively coupled plasma-chemical vapor deposition. USE - Manufacture of graphene used for forming graphene sheet (claimed) for use in sensor and memory. ADVANTAGE - The graphene with large area is manufactured easily at low temperature. The graphene sheet has excellent transparency, flexibility and improved safety. The graphene can be transferred directly without requiring a separate process. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for direct transfer method of graphene. DESCRIPTION OF DRAWING(S) - The drawing shows the schematic view of the manufacture of graphene. Material (21) Metal catalytic layer (22) Graphene (23) Carbon source-containing gas (24)