• 专利标题:   Thin film growth structure comprises a board, fluid support layer, base that is formed on an upper surface of flowable support layer, substrate, and flowable support layer which is thin film formed of material that maintains a liquid state.
  • 专利号:   KR2021025575-A, KR2234101-B1
  • 发明人:   LEE I, WUK L W
  • 专利权人:   UNIV KOREA RES BUSINESS FOUND
  • 国际专利分类:   C30B025/06, C30B025/12, C30B025/18, C30B029/06, H01L021/02, H01L021/324
  • 专利详细信息:   KR2021025575-A 09 Mar 2021 H01L-021/02 202127 Pages: 15
  • 申请详细信息:   KR2021025575-A KR026738 26 Feb 2021
  • 优先权号:   KR113423, KR026738

▎ 摘  要

NOVELTY - A thin film growth structure comprises a board; fluid support layer that is formed on the substrate; base that is formed on an upper surface of flowable support layer and a thin film grown on the base; substrate which is formed of a material having a surface energy greater than that of a material constituting the flowable support layer; and flowable support layer which is thin film formed of a material that maintains a liquid state with a vapor pressure of less than a predetermined size in a predetermined process temperature range. USE - A thin film growth structure. ADVANTAGE - Since the thin film growth uses a fluid support layer, it is easy to increase the area, and the residual stress in the thin film due to the difference in the coefficient of thermal expansion between the substrate and the deposited thin film is not required. During the thin film process, since the base substrate floats on the fluid support layer in a liquid state, residual stress due to the difference in the coefficient of thermal expansion from the substrate can be drastically reduced.