• 专利标题:   Dry cleaning of copper substrate for preparing chemical vapor deposited graphene, involves subjecting copper substrate to aerobic atmosphere for oxidation to form oxide layer and removing oxide layer from surface of substrate.
  • 专利号:   CN106884153-A, CN106884153-B
  • 发明人:   ZHANG Y, YU G, GE X, ZHANG H, CHEN Z, SUI Y, DENG R
  • 专利权人:   SHANGHAI INST MICROSYSTEM INFORMATION
  • 国际专利分类:   C23C016/02, C23C016/26, C30B025/18, C30B029/02
  • 专利详细信息:   CN106884153-A 23 Jun 2017 C23C-016/02 201754 Pages: 9 Chinese
  • 申请详细信息:   CN106884153-A CN10934979 15 Dec 2015
  • 优先权号:   CN10934979

▎ 摘  要

NOVELTY - Dry cleaning of copper substrate involves subjecting the copper substrate to an aerobic atmosphere for oxidation to form oxide layer and removing the oxide layer from the surface of the substrate. USE - Dry cleaning of copper substrate for preparing chemical vapor deposited graphene (claimed). ADVANTAGE - The method is simple, controlled easily and provides substrate with high reproducibility. The copper substrate obtained effectively reduces the nucleation density, defects and provide graphene with high quality.