• 专利标题:   Forming edge-functionalized graphene used as wafers for solar cells involves reacting organic material having functional group with graphite in reaction medium containing methane-sulfonic acid and phosphorus pentoxide.
  • 专利号:   US2013108540-A1, KR2013046021-A, KR1349477-B1, US9017638-B2
  • 发明人:   BAEK J B, CHOI E K, JEON I Y, BAE S Y, CHOI B H
  • 专利权人:   UNIST ACADIND RES CORP, LG INNOTEK CO LTD, UNIST ACADIND RES CORP
  • 国际专利分类:   B82B001/00, B82B003/00, C01B031/02, C07C221/00, C07C045/00, G10K011/16, G10L021/02, H04B001/12, B82Y030/00, B82Y040/00, C01B003/00, C01B031/04
  • 专利详细信息:   US2013108540-A1 02 May 2013 C01B-031/02 201335 Pages: 9 English
  • 申请详细信息:   US2013108540-A1 US404918 24 Feb 2012
  • 优先权号:   KR110319, KR110319

▎ 摘  要

NOVELTY - Production of an edge-functionalized graphene involves: providing graphite; and reacting organic material having at least one functional group with the graphite in reaction medium containing methane-sulfonic acid and phosphorus pentoxide, or in reaction medium containing trifluoromethanesulfonic acid, thus to substitute bonds of edge positions between graphene sheets with covalent bonds between graphene and organic material, where the functional groups include at least one of carboxylic acid group, amide group, sulfonic acid group, carbonyl chloride group or carbonyl bromide group. USE - For production of an edge-functionalized graphene (claimed), used in various applications such as next generation silicons, semiconductors, wafers for solar cells, indium tin oxide (ITO) transparent electrodes, hydrogen storage materials, optical fibers, and electronic devices. ADVANTAGE - The method provides highly pure graphene i.e. purity of 90-99%, and large scaled graphene; produces graphene inexpensively in a large amount with a minimum loss of graphite; and provides high purity of graphene in a low cost, and mass production of graphene is possible.