▎ 摘　　要

NOVELTY - The method involves preparing (S10) a graphene film, and providing a graphene film on a substrate. The substrate having a flexible material is light-transmissive. A first electrode and a second electrode are formed (S20) on the graphene film. A quantum dot film is formed (S30) between the first electrode and the second electrode, undergoes a ligand exchange process, and is located on the graphene film. The material of the ligand exchange solution includes butylamine, ethanedithiol, or benzenedithiol. The copper foil is set in the furnace cavity, argon gas and hydrogen gas are introduced into the furnace cavity, and the temperature in the furnace cavity reaches 800-12001200 degrees . The copper foil on which the graphene thin film is grown is put into a replacement solution to separate the graphene thin film. USE - Method for manufacturing photodetector. ADVANTAGE - The light transmittance ability of the photodetector is improved. The photodetector is flexible and bendable. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a photodetector. DESCRIPTION OF DRAWING(S) - The drawing shows the flowchart illustrating the method for manufacturing photodetector. (Drawing includes non-English language text) Step for preparing graphene film, and providing graphene film on substrate (S10) Step for forming first electrode and second electrode (S20) Step for forming quantum dot film between first and second electrodes (S30)