▎ 摘　　要

NOVELTY - Method for forming graphene film on a substrate, involves heating at least portion of region of silicon carbide portion in a vacuum, an inert atmosphere or a reducing atmosphere, heating the heated area from a first temperature to a target temperature of 1400-2700degrees Celsius at heating rate of 500degrees Celsius or higher, holding for 0-60 seconds, and cooling heated region from the target temperature to second temperature at a cooling rate above the cooling rate. USE - The method is useful for forming graphene film on a substrate, the substrate comprises a silicon carbide portion (4H-SiC) surface substrate is respectively and smoothed by hydrogen and propane, followed by cleaning and smoothing by silane to remove surface oxide. ADVANTAGE - The method forms graphene film on a substrate having a silicon carbide portion. The method is capable of forming the graphene film with high quality and high yield. The graphene film has high thermal conductivity, high electrical conductivity and high mechanical strength, and is formed in a short period of time. The substrate with micro-topography, after 30-60 minutes of heat treatment, is easy to be damaged, and has excellent thermal stability. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a complex.