▎ 摘　　要

NOVELTY - The method involves preparing (S100) the silicon carbide substrate. The doped region for injecting the impurity into the silicon carbide substrate is formed (S200). The protective layer is formed (S300) on the silicon carbide substrate into the graphene. The impurity is activated (S400), the protective layer is removed (S500), and the process for manufacturing semiconductor device is performed (S600). USE - Manufacturing method of silicon carbide semiconductor device. ADVANTAGE - The graphene in which the depostion specification is excellent by the chemical vapor deposition on the surface of the silicon carbide substrate is deposited. The doped region of the silicon carbide substrate to the graphene is protected for minimizing the thermal influence in the impurity. The doped impurity emission is suppressed. DESCRIPTION OF DRAWING(S) - The drawing shows a flowchart illustrating the manufacturing process of silicon carbide semiconductor device. (Drawing includes non-English language text) Step for preparing silicon carbide substrate (S100) Step for forming doped region (S200) Step for forming protective layer (S300) Step for activating impurity (S400) Step for removing protective layer (S500) Step for performing process for manufacturing semiconductor device (S600)