• 专利标题:   Low dielectric polyimide film useful in flexible printed circuit board, comprises polyimide and double-layer hollow particle, which is hollow nano-particle coated by fluorine graphene oxide.
  • 专利号:   CN113549325-A
  • 发明人:   ZHANG T, YANG F, SONG M, XIONG F, ZHANG W
  • 专利权人:   NINGBO SOLARTRON TECHNOLOGY CO LTD
  • 国际专利分类:   C08J005/18, C08K007/26, C08K009/06, C08K009/10, C08L079/08, H05K001/03
  • 专利详细信息:   CN113549325-A 26 Oct 2021 C08L-079/08 202219 Chinese
  • 申请详细信息:   CN113549325-A CN10722392 29 Jun 2021
  • 优先权号:   CN10722392

▎ 摘  要

NOVELTY - Low dielectric polyimide film comprises polyimide and double-layer hollow particle, and the double-layer hollow particle is hollow nano-particle coated by fluorine graphene oxide. USE - The low dielectric polyimide film is useful in flexible printed circuit board (claimed). ADVANTAGE - The method: can prepare the hollow nano particles and oxygen fluoride graphene into double-layer structure nano particles, introduces fluorine element and porous structure into the polyimide film, and prepares the low dielectric constant polyimide film with excellent performance. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for preparing the polyimide film, comprising (i) adding the amino silane coupling agent into the hollow nano-particle dispersion, stirring, separating, drying and grinding to obtain aminated hollow nano particles; (ii) adding the aminated hollow nano-particles into the graphene oxide dispersion liquid, dispersing, separating and drying to obtain double-layer hollow nano particles; and (iii) uniformly dispersing the double-layer hollow nano-particles in the polyamic acid solution, coating on the substrate, and performing gradient imidization to obtain the polyimide film.