▎ 摘　　要

NOVELTY - The device (100) has a first electrode (141) connected to a second end of a graphene layer (130) and a second electrode (142) on a substrate (110). A gate insulating layer (150) is provided on the substrate to cover the graphene layer and a gate electrode (160) is provided on the gate insulating layer. The gate electrode and multiple semiconductor nanowires (120) face each other with the graphene layer, such that one of the multiple semiconductor nanowires is connected to the second electrode, the graphene layer or other of the multiple semiconductor nanowires. USE - Graphene switching device such as n-type transistor or p-type transistor. ADVANTAGE - The current is increased according to the increase in the gate voltage when a negative voltage is applied to the second electrode, such that diode characteristics are adjusted. As the semiconductor nanowires are used as a Schottky barrier in the flexible graphene switching device, a FET which is a high-mobility electronic device and has a high ON/OFF ratio at the same time is provided and a flexible electronic device is easily realized. DESCRIPTION OF DRAWING(S) - The drawing shows a cross-sectional view illustrating the flexible graphene switching device including semiconductor nanowires. Graphene switching device (100) Substrate (110) Semiconductor nanowires (120) Graphene layer (130) First electrode (141) Second electrode (142) Gate insulating layer (150) Gate electrode (160)