• 专利标题:   Pressure-strain sensor comprises graphene structure having three-dimensional porous structure, planar sheets is provided on surface of graphene structure and polymer layer which is configured to cover graphene structure and planar sheets.
  • 专利号:   US2019323905-A1, KR2019122525-A
  • 发明人:   KIM S J, CHOI C, MONDAL S, KIMSEONGJUN, CHOI C G, SHUVRA M
  • 专利权人:   ELECTRONICS TELECOM RES INST, ELECTRONICS TELECOM RES INST
  • 国际专利分类:   G01L001/22, G01L009/00, A63B071/06, G01L001/16
  • 专利详细信息:   US2019323905-A1 24 Oct 2019 G01L-001/22 201984 Pages: 29 English
  • 申请详细信息:   US2019323905-A1 US389473 19 Apr 2019
  • 优先权号:   KR046360, KR120771

▎ 摘  要

NOVELTY - Pressure-strain sensor comprises graphene structure having three-dimensional porous structure, planar sheets is provided on surface of graphene structure and polymer layer which is configured to cover graphene structure and planar sheets, where each of planar sheets contains transition metal chalcogenide compound. USE - Pressure-strain sensor. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a method for manufacturing pressure-strain sensor, which involves: (A) providing graphene structure on three-dimensional porous metal foam to provide first pre-structure; (B) providing planar sheets on graphene structure to provide second pre-structure; (C) providing polymer layer which is configured to cover graphene structure and planar sheets to provide third pre-structure; and (D) removing metal foam.