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  • 专利标题:   Formation of graphene layer used for structure, involves forming graphene layer directly on a crystallographic surface having non-hexagonal symmetry.
  • 专利号:   US2012028052-A1, US8877340-B2
  • 发明人:   CHU J O, DIMITRAKOPOULOS C, FREITAG M O, GRILL A, MCARDLE T J, SUNG C, WISNIEFF R L
  • 专利权人:   INT BUSINESS MACHINES CORP, INT BUSINESS MACHINES CORP
  • 国际专利分类:   B32B017/06, H01L021/20, B32B009/00
  • 专利详细信息:   US2012028052-A1 02 Feb 2012 B32B-017/06 201211 Pages: 15 English
  • 申请详细信息:   US2012028052-A1 US844029 27 Jul 2010
  • 优先权号:   US844029

▎ 摘　　要

NOVELTY - Formation of graphene layer involves forming graphene layer (30) directly on a crystallographic surface having non-hexagonal symmetry. USE - Formation of graphene layer used for structure (claimed) for semiconductor device. ADVANTAGE - The graphene layer is efficiently manufactured with excellent in-plane conductivity. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for structure. DESCRIPTION OF DRAWING(S) - The drawing shows cross-sectional view of graphene layer. Semiconductor substrate (10) Semiconductor-carbon alloy layer (20) Top surface (21) Graphene layer (30)