▎ 摘　　要

NOVELTY - Preparing flexible graphene field-effect transistor involves coating a layer of thin film on the silicon substrate, and forming an alumina dielectric layer on the thin film to obtain the substrate. A first electrode is prepared on the alumina dielectric layer. A gate dielectric layer is formed on the substrate, the gate dielectric layer covers the first electrode, and the second electrode is processed on the gate dielectric layer, the first electrode and the second electrode are not connected. The graphene layer is transferred on the substrate by stamp method, and the graphene is patterned, and the second electrode is exposed, the graphene is used for connecting the first electrode and the second electrode to obtain the graphene device. The graphene device is peeled off from the substrate silicon, to obtain the graphene field field-effect transistor flexible substrate. USE - Method for preparing the flexible graphene FET. ADVANTAGE - The preparation method of flexible graphene field field-effect transistor improves the density of the transistor under the unit thickness. The method is simple and cost-effective.