▎ 摘　　要

NOVELTY - The method involves placing (602) a substrate for graphene film synthesis inside of a quasi-enclosed substrate holder. A graphene film is generated (604) on the substrate through chemical vapor deposition. A cap is provided over the open side of the quasi enclosed substrate holder. The quasi enclosed substrate holder comprises a prolate quartz box and a high temperature inert material. The open side of the quasi enclosed substrate holder includes a gap having a width in the range of from about 1 mm to 2 mm. The cap placed over the open side of the quasi enclosed substrate holder is made of an inert material. The metal foil comprises a copper foil. The graphene film comprises one or more dynamic flow parameters are generated. The dynamic flow parameters comprise dimensions of a chemical vapor deposition chamber. USE - Method for generating graphene film. ADVANTAGE - The larger grain size growth is facilitated by the ability of gases to move in and out of the quasi enclosed substrate holder. DESCRIPTION OF DRAWING(S) - The drawing shows a flowchart illustrating the method for generating graphene film. Step for placing the substrate for graphene film synthesis (602) Step for generating the graphene film (604)