▎ 摘　　要

NOVELTY - A UV-communication-oriented micro UV LED chip comprises substrate, buffer layer, and n-type electron injection layer along the epitaxial growth direction. The n-type electron injection layer is a two-stage step structure. The first stage step is an exposed portion. The convex non-exposed portion of n-type electron injection layer of the second stage step along the epitaxial growth direction is multiple quantum well layer, p-type electron blocking layer, and first p-type hole injection layer. The first p-type hole injection layer is another two-stage step structure. The second stage step is p-type hole acceleration layer along the epitaxial growth direction, second p-type hole injection layer, p-type heavily doped hole injection layer and current expansion layer. The current expansion layer is provided with a p-type ohmic electrode. The exposed portion of the n-type electronic injection layer is provided with an n-type ohmic electrode. USE - UV-communication-oriented micro UV LED chip. ADVANTAGE - The chip improves light effect and response speed of the device and satisfies requirement of high-speed data transmission. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for preparation of the chip comprising baking substrate in a metal organic compound chemical vapor deposition or molecular beam epitaxy reactor at 900-1500 degrees C to remove foreign objects on the surface of the substrate; epitaxially growing buffer layer on the surface of the substrate; epitaxially growing n-type electron injection layer on the surface of the buffer layer; epitaxially growing multiple quantum well layer; epitaxially growing -type electron blocking layer; epitaxially growing first p-type hole injection layer and band gap; epitaxially growing second p-type hole injection layer; epitaxially growing p-type heavily doped hole injection layer; and epitaxially growing p-type heavily doped hole injection layer and dry etching.