▎ 摘　　要

NOVELTY - Sintering high-density indium tin oxide (ITO) blank comprises (i) taking 55-65 pts. wt. ITO powder and 3-6 pts. modified hydroxyapatite, (ii) uniformly mixing the raw materials, adding 2-3 times graphene composite nano-silica modified solution, stirring, (iii) selecting the substrate, and then sputtering, and (iv) finally sintering at 1550-1650?? C for 25-35 minutes, and cooling to room temperature to obtain a high density ITO blank. USE - Method for sintering high density tin indium oxide (ITO) blank used in solar battery, LCD device and touch control circuit board. ADVANTAGE - The method does not add modified hydroxy apatite, enhancing the density and transmission performance of ITO products, improving the use efficiency of the products, and provides a process control precise high density ITO blanks.