• 专利标题:   Method for sintering high density tin indium oxide (ITO) blank used in solar battery for e.g. touch control circuit board, involves adding graphene composite nano silicon dioxide modified solution, selecting substrate, and sputtering substrate.
  • 专利号:   CN115536383-A, CN115536383-B
  • 发明人:   TANG Z, TANG A
  • 专利权人:   ZHUZHOU TORCH ANTAI NEW MATERIALS CO LTD
  • 国际专利分类:   C04B035/457, C04B035/622, C04B035/626
  • 专利详细信息:   CN115536383-A 30 Dec 2022 C04B-035/457 202308 Chinese
  • 申请详细信息:   CN115536383-A CN11362137 02 Nov 2022
  • 优先权号:   CN11362137

▎ 摘  要

NOVELTY - Sintering high-density indium tin oxide (ITO) blank comprises (i) taking 55-65 pts. wt. ITO powder and 3-6 pts. modified hydroxyapatite, (ii) uniformly mixing the raw materials, adding 2-3 times graphene composite nano-silica modified solution, stirring, (iii) selecting the substrate, and then sputtering, and (iv) finally sintering at 1550-1650?? C for 25-35 minutes, and cooling to room temperature to obtain a high density ITO blank. USE - Method for sintering high density tin indium oxide (ITO) blank used in solar battery, LCD device and touch control circuit board. ADVANTAGE - The method does not add modified hydroxy apatite, enhancing the density and transmission performance of ITO products, improving the use efficiency of the products, and provides a process control precise high density ITO blanks.