▎ 摘　　要

NOVELTY - The structure has an interlayer dielectric layer formed with an opening i.e. through-hole, where the interlayer dielectric layer is made of silicon dioxide, and has dielectric constant less than 2.2 of an ultra-low dielectric material, and width or height of the opening is less than 45 nm. Metal material is filled in the opening, where the metal material is copper, aluminum or tungsten. A surface of the metal material is formed with a graphene layer. A dual damascene structured groove is formed in the opening. USE - Metal interconnection structure. ADVANTAGE - The structure is provided with the graphene layer, which is attached with the copper, nickel and other metal material so as to reduce resistance simulation of the structure. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a metal interconnection structure manufacturing method. DESCRIPTION OF DRAWING(S) - The drawing shows a flow diagram illustrating a metal interconnection structure manufacturing method. '(Drawing includes non-English language text)'