• 专利标题:   Transferring graphene layer comprises growing graphene layer on metal layer, laminating dry film photoresist on graphene layer, chemically etching away metal layer, and removing dry film photoresist.
  • 专利号:   US2013210218-A1, IT1409715-B, US9087692-B2
  • 发明人:   ACCARDI C, LOVERSO S, RAVESI S, SPARTA N G
  • 专利权人:   STMICROELECTRONICS SRL, STMICROELECTRONICS SRL
  • 国际专利分类:   H01L021/02, H01L000/00, B82Y030/00, B82Y040/00, C01B031/04, H01L051/00
  • 专利详细信息:   US2013210218-A1 15 Aug 2013 H01L-021/02 201358 Pages: 10 English
  • 申请详细信息:   US2013210218-A1 US762819 08 Feb 2013
  • 优先权号:   ITMI0191

▎ 摘  要

NOVELTY - Transferring graphene layer comprises growing graphene layer (115) on metal layer; laminating dry film photoresist on graphene layer; laminating a tape on dry film photoresist; chemically etching away metal layer and obtaining initial structure; laminating initial structure on final substrate; thermally releasing tape from graphene layer; and removing dry film photoresist and obtaining final structure. USE - Method for transferring graphene layer. ADVANTAGE - The processing temperature, adhesion capacity and surface roughness of the layer do not affect the transferring process. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of transferring graphene on substrate. Final substrate (104) Graphene layer (115) Integrated structures (120B)