▎ 摘　　要

NOVELTY - The method involves preparing a layer of graphite or graphene on a silicon carbide substrate. Doped graphite alkene is provided with n-type doped grapheme. P-type doped graphene area pre-deposition is obtained by a P-type doped element. Annealing time and passivation temperature are controlled by a graphene transverse P/N junction, where passivation temperature is 400-1000 degrees Celsius and time is 1-120 hours. A mask layer is made of Si3N4 or SiO2. The P-type doped element is made of germanium, silicon and gold. The passivation temperature is 400-1000 degrees Celsius and time is l-120hours. USE - Method for forming a horizontal graphene PN junction on a thin film crystal of a semiconductor device. ADVANTAGE - The method ensures simple operation. DESCRIPTION OF DRAWING(S) - The drawing shows a block diagram illustrating a horizontal graphene PN junction forming method.'(Drawing includes non-English language text)'