▎ 摘　　要

NOVELTY - The method involves transferring a two-dimensional material to a substrate. A positive electron beam glue is spin coated and a nanostructure of the two-dimensional material is obtained by using an electron beam exposure system according to a designed layout. The two-dimensional material nanostructure is etched with reactive ion beam. The positive electron beam glue is removed. A layout is redesigned and positive photoresist is spin-coated. A maskless lithography is used to perform overlay etching. A portion is exposed outside the two-dimensional material nanostructure by developing after the overlay is completed. The two-dimensional material exposed in is etched by oxygen plasma to remove the portion other than the nanostructure of the two-dimensional material. The dose of electron beam exposure is 200-400 μC/cm2, and the size of the electron beam current is 0.2-1 nA. The two-dimensional material has graphene, molybdenum oxide, black phosphorus, and metal oxide. USE - Preparation method of two-dimensional material nanometer structure used in photonics device (claimed). ADVANTAGE - The method prepares two-dimensional material nanometer coupling of electromagnetic wave, which has nano-structure of coupling infrared and terahertz wave band plasmons, and controls the Fermi level through the grid pressurizing, so as to control the coherent intensity and propagation length of the plasmon. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a photonics device. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of a scanning electron microscope picture of repeating unit in graphene material nanostructure. (Drawing includes non-English language text)