• 专利标题:   Producing transition metal chalcogen compound useful in semiconductor devices comprises forming graphene thin film, forming transition metal chalcogen compound on graphene thin film from transition metal precursor and chalcogen precursor.
  • 专利号:   KR2022126076-A
  • 发明人:   HOON L S, HONG B H, KIM J W, CHO S P, BAEKWON P, LEE G S, IL J, LIM E H
  • 专利权人:   UNIV SEOUL NAT R DB FOUND, GRAPHENE SQUARE INC
  • 国际专利分类:   C01B032/186, C01B032/194, C01B032/198, C30B025/16, C30B025/18, C30B029/46
  • 专利详细信息:   KR2022126076-A 15 Sep 2022 C30B-025/18 202279 Pages: 27
  • 申请详细信息:   KR2022126076-A KR030224 08 Mar 2021
  • 优先权号:   KR030224

▎ 摘  要

NOVELTY - Producing a transition metal chalcogen compound comprises forming a graphene thin film including at least two graphene layers on a substrate, and forming a transition metal chalcogen compound on the graphene thin film from a transition metal precursor and a chalcogen precursor using atomic layer deposition to form a transition metal chalcogen compound thin film. USE - The transition metal chalcogen compound is useful in semiconductor devices e.g. transistors and flexible transistor devices. ADVANTAGE - The transition metal chalcogen compound: has flexible and transparent properties and improved crystallinity. The method is fast.