▎ 摘　　要

NOVELTY - A self-supporting fluorine-nitrogen-doped graphene film based sodium battery comprises negative electrode, self-supporting fluorine- nitrogen doped graphene thin film as positive electrode, and ethylene carbonate/dimethyl carbonate as electrolyte solution, where the volume ratio of ethylene carbonate and dimethyl carbonate is 1:1, and the concentration of sodium perchlorate is 1 mol/l in the self-supporting fluorine-nitrogen-doped graphene film, and fluorine-nitrogen element-doped graphene thin film is prepared by uniformly dispersing deionized water with graphene oxide on the substrate to form a liquid film and drying in an air atmosphere at 50-80 degrees C to obtain a graphene oxide film, immersing the graphene oxide film in a mixed solution composed of acetonitrile and hydrofluoric acid, and sealing and heating at 90-180 degrees C, excluding the endpoints of 90 degrees C and 180 degrees C, holding for 24-48 hours to achieve fluorine-nitrogen element-doped graphene thin film. USE - Self-supporting fluorine-nitrogen-doped graphene film based sodium battery. ADVANTAGE - The sodium battery has excellent electrical properties. The prepared graphene film has better mechanical properties and toughness. DETAILED DESCRIPTION - A self-supporting fluorine-nitrogen-doped graphene film based sodium battery comprises negative electrode, self-supporting fluorine- nitrogen doped graphene thin film as positive electrode, and ethylene carbonate/dimethyl carbonate as electrolyte solution, where the volume ratio of ethylene carbonate and dimethyl carbonate is 1:1, and the concentration of sodium perchlorate is 1 mol/l in the self-supporting fluorine-nitrogen-doped graphene film, doping amount of nitrogen element is 2-9.5% and the doping amount of fluorine element is 1-2%, and the fluorine-nitrogen element-doped graphene thin film is prepared by uniformly dispersing deionized water with graphene oxide on the substrate to form a liquid film and drying in an air atmosphere at 50-80 degrees C to obtain a graphene oxide film, immersing the graphene oxide film in a mixed solution composed of acetonitrile and hydrofluoric acid, and sealing and heating at 90-180 degrees C, excluding the endpoints of 90 degrees C and 180 degrees C, holding for 24-48 hours to achieve fluorine-nitrogen element-doped graphene thin film, and the mixed solution is composed of acetonitrile and 40-50% hydrofluoric acid in the hydrofluoric acid, the volume ratio of the acetonitrile and the hydrofluoric acid is (20-30):(1-5).