• 专利标题:   Manufacture of non-catalytic graphene-grown substrate used for electronic component, involves performing plasma-enhanced chemical vapor deposition of gas containing carbon on substrate, supplying etching gas and growing graphene.
  • 专利号:   KR2016002461-U
  • 发明人:   LEE Y T
  • 专利权人:   LEE Y T
  • 国际专利分类:   C01B031/04
  • 专利详细信息:   KR2016002461-U 13 Jul 2016 C01B-031/04 201662 Pages: 43
  • 申请详细信息:   KR2016002461-U KR003052 03 Jun 2016
  • 优先权号:   KR000365, KR003052

▎ 摘  要

NOVELTY - Manufacture of non-catalytic low-temperature graphene-grown substrate involves forming a substrate free of catalyst layer at the surface, supplying a gas containing carbon, performing plasma-enhanced chemical vapor deposition, supplying etching gas, adsorbing hydrocarbon radicals, diffusing on the surface of nucleus by Van der Waals force, growing hetero-epitaxially, performing low pressure chemical vapor deposition constantly and growing graphene. USE - Manufacture of non-catalytic graphene-grown substrate used for electronic component.