▎ 摘　　要

NOVELTY - Production of graphene/semiconductor nanowire hybrid material composition involves preparing a catalyst metal-coated mixture by mixing exfoliated graphite flakes having a flake thickness of 100 nm to 1 mu m, or graphene sheets, with semiconductor particles having a particle diameter of 50 nm to 50 mu m to form a mixture and depositing a catalytic metal in the form of nanoparticles or coating, on a surfaces of the exfoliated graphite flakes or graphene sheets and/or surfaces of the semiconductor particles, and exposing the catalyst metal-coated mixture to a high temperature environment of 100-2500 degrees C to enable catalytic metal-assisted growth of semiconductor nanowires having a diameter or thickness of 2-100 nm, from the semiconductor particles. The semiconductor particles are made of at least one chosen from gallium, indium, germanium, tin, lead, phosphorus, arsenic, antimony, bismuth, and tellurium, or a combination of the metal with less than 30 wt.% silicon. USE - Production of graphene/semiconductor nanowire hybrid material composition used as anode active material for forming electrode layer of lithium battery (all claimed) for electric vehicle, renewable energy storage, and smart grid application. ADVANTAGE - The method produces graphene/semiconductor nanowire hybrid material composition which is capable of producing lithium battery electrode having quick charge and discharge characteristics, high energy density, high power density, and long cycle life. DETAILED DESCRIPTION - Production of graphene/semiconductor nanowire hybrid material composition involves preparing a catalyst metal-coated mixture by mixing exfoliated graphite flakes having a flake thickness of 100 nm to 1 mu m, or graphene sheets having a thickness of 0.34-100 nm, with semiconductor particles having a particle diameter of 50 nm to 50 mu m to form a mixture and depositing a catalytic metal in the form of nanoparticles having a size of 1-100 nm or a coating having a thickness of 1-100 nm, on a surfaces of the exfoliated graphite flakes or graphene sheets and/or surfaces of the semiconductor particles, and exposing the catalyst metal-coated mixture to a high temperature environment of 100-2500 degrees C to enable catalytic metal-assisted growth of semiconductor nanowires having a diameter or thickness of 2-100 nm, from the semiconductor particles. The semiconductor particles are made of at least one chosen from gallium, indium, germanium, tin, lead, phosphorus, arsenic, antimony, bismuth, and tellurium, or a combination of the metal with less than 30 wt.% silicon. An INDEPENDENT CLAIM is included for graphene/semiconductor nanowire hybrid material composition, which comprises 1-99 wt.% graphene sheets and semiconductor nanowires having a diameter of 2-20 nm. DESCRIPTION OF DRAWING(S) - The drawing shows a flowchart of preparation of the semiconductor nanowires from the semiconductor particles.