• 专利标题:   Manufacture of graphene involves adding silicon carbide powder to high-temperature vacuum furnace under vacuum condition or in presence of specified atmosphere, heating, and sublimating silicon by controlling heating rate.
  • 专利号:   CN102259847-A, CN102259847-B
  • 发明人:   BAO X, DENG D, PAN X, TAN D
  • 专利权人:   CAS DALIAN CHEM PHYSICAL INST
  • 国际专利分类:   C01B031/04
  • 专利详细信息:   CN102259847-A 30 Nov 2011 C01B-031/04 201220 Chinese
  • 申请详细信息:   CN102259847-A CN10185785 28 May 2010
  • 优先权号:   CN10185785

▎ 摘  要

NOVELTY - Silicon carbide powder is added to a high-temperature vacuum furnace under vacuum condition or in presence of steam, carbon dioxide or carbon monoxide atmosphere, heated, and silicon is sublimated and separated by controlling the heating rate to obtain graphene. USE - Manufacture of graphene. ADVANTAGE - The method efficiently provides graphene having excellent oxidation resistance with reduced defect, by simple method.