▎ 摘　　要

NOVELTY - A device (100) comprises a contact (104) made of a semi-metallic material, a contact made (106) of a metal material, the contact (104) and the contact (106) forming asymmetric electrodes, and a ferroelectric insulating layer arranged between the contact (104) and the contact (106) and electrically connected to the contacts (104) and (106). USE - Device for high-speed low power non-volatile memory for next generation electronic memory and computing technology. ADVANTAGE - The ferroelectric tunnel junctions that achieve high tunnelling electroresistance can be provided. The device can offer low power consumption, non-volatile switching and non-destructive readout, and thus are promising for the development of memory and computing applications. The asymmetric electrodes can cause a large modulation of average barrier height (ABH) when ferromagnetic polarization changes direction, thus exponentially influencing the tunning current. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of the device. 100Device 102Ferroelectric insulating layer 104, 106Contact 108Substrate