• 专利标题:   Photoetching of erasable graphene involves photoetching oxidation graphene by laser processing, graphene, and performing oxygen plasma treatment to oxidized graphene after laser treatment.
  • 专利号:   CN115407619-A
  • 发明人:   GU M, ZHANG Q, CHEN X, LUAN H, WAN Z
  • 专利权人:   GU M, ZHANG Q, LUAN H, CHEN X, WAN Z
  • 国际专利分类:   C01B032/184, C01B032/194, G03F007/20
  • 专利详细信息:   CN115407619-A 29 Nov 2022 G03F-007/20 202305 Chinese
  • 申请详细信息:   CN115407619-A CN11139652 19 Sep 2022
  • 优先权号:   CN11139652

▎ 摘  要

NOVELTY - Photoetching of erasable graphene involves photoetching the oxidation graphene by laser treatment, and then performing oxygen plasma treatment on the oxidized graphene after the laser treatment. USE - The method for photoetching of erasable graphene used for preparing complex device structure (claimed), and in diodes, field effect tubes, photoelectric sensors, solar cells and super cells. ADVANTAGE - The method is convenient for graphene photoetching for multiple times, and is capable of partially or completely erasing the surface graphene which is good for preparing the complex structure of the graphene. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for erasable graphene, prepared by the photoetching method as mentioned above.