• 专利标题:   Preparation of in-situ nitrogen-doped porous graphene used in e.g. supercapacitor, involves heating pantothenic acid salt, and removing metal oxide mixture from mixture of in-situ nitrogen-doped porous graphene and metal oxide mixture.
  • 专利号:   CN104129781-A, CN104129781-B
  • 发明人:   MA J, MAO Y, GUO W
  • 专利权人:   SHENZHEN CAPCHEM TECHNOLOGY CO LTD
  • 国际专利分类:   C01B031/04
  • 专利详细信息:   CN104129781-A 05 Nov 2014 C01B-031/04 201504 Pages: 7 Chinese
  • 申请详细信息:   CN104129781-A CN10362351 25 Jul 2014
  • 优先权号:   CN10362351

▎ 摘  要

NOVELTY - Pantothenic acid salt or its mixture is heated to 400-2500 degrees C in a non-oxidizing atmosphere to obtain mixture of in-situ nitrogen-doped porous graphene and metal oxide mixture. The metal oxide mixture is removed from the mixture to obtain in-situ nitrogen-doped porous graphene. The pantothenic acid salt is lithium, sodium, potassium, rubidium, magnesium, calcium, strontium, barium, cobalt, nickel, manganese, zinc, lead, copper, cadmium, aluminum or indium. USE - Preparation of in-situ nitrogen-doped porous graphene (claimed) used in porous lithium-ion battery, supercapacitor, and biological field. ADVANTAGE - The method provides in-situ nitrogen-doped porous graphene having large specific-surface area within a short period of time, by a simple process.