▎ 摘　　要

NOVELTY - The utility model claims a pressure sensor based on graphene piezoresistive structure, mainly comprising a graphene pressure resistance, lead column, a substrate, a sealing shell, an interconnection electrode, the composite electrode, a sealing ring, a ceramic base; graphene piezoresistive structure composed of graphene/boron nitride/boron nitride nanometre film, the composite electrode, the nanometre film is composed of upper and lower two layers of boron nitride and graphene, in which the pressure is disposed below the substrate surface, the substrate upper part of etching to form the concave structure, the substrate and the ceramic substrate by metal bonding to form oxygen free vacuum cavity; isolating the direct contact of the pressure with the outside, it provides non-oxygen protection, pressure through the interconnection electrode and a lead column connected with the external resistor form the Wheatstone bridge, the device using graphene piezoresistive structure instead of silicon pressure sensitive resistance, long-term stable work in high temperature environment more than 1000 degrees centigrade, good repeatability, high reliability, good acid and alkali resistance, and can be applied to dynamic and static high temperature testing environment and obviously improve the high temperature interval.