▎ 摘　　要

NOVELTY - The method involves providing a transparent insulating substrate. An insulating template is provided and is a flat plate of electric insulating material. The insulating template is completely aligned and covered on a composite conductive substrate. Single-crystal graphene is provided and whose outer edge has the same shape as the outer edge of the template substrate. The customized template graphene substrate is placed in a metal organic chemical vapor deposition system. The passivation packaging technology is used to protect the sidewall of the full-color micro-LED array epitaxial wafer. A transparent electrode is prepared on the surface of the full-color micro-LED array flat sheet by mask deposition method. The bottom surface electrode bonding technology is used to bond the full-color micro-LED array flat sheet and the driving circuit board to realize a full-color nitride micro-LED array with a vertical structure and light emission from the top surface. USE - Single-chip integrated preparation method of full-color nitride semiconductor micro-LED array. ADVANTAGE - The method requires no additional micro-nano processing technology, is energy-saving and environmentally-friendly, is suitable for mass production, and is applied to display chips including augmented or virtual reality and 8K ultra-clear display. DESCRIPTION OF DRAWING(S) - The drawing shows a flowchart illustrating the single-chip integrated preparation method of full-color nitride semiconductor micro-LED array. (Drawing includes non-English language text)