▎ 摘　　要

NOVELTY - The method involves providing a substrate (S10), where a surface of the substrate is provided with an insulating layer, a source electrode, a gate electrode and a drain electrode. A metal mask is plated (S12) on the gate surface. A barrier layer is modified on an electrode surface. The barrier layer is removed (S13) from the metal mask by using ferric ion solution through wet etching method. A dielectric layer is formed (S14) in a region uncovered by the barrier layer, where the dielectric layer covers the gate electrode. The barrier layer is removed (S15) to expose the source electrode and the drain electrode. A conductive gas-sensitive layer is formed (S16) on the source electrode, the drain electrode and the dielectric layer. USE - Method for manufacturing a gas sensor. ADVANTAGE - The method enables effectively improving gas sensor performance and region selective growth of the dielectric layer when the conductive gas-sensitive layer is completely exposed outside, which is in air contact to improve an action area of the conductive gas-sensitive layer. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a gas sensor. DESCRIPTION OF DRAWING(S) - The drawing shows a flow diagram illustrating a method for manufacturing a gas sensor. (Drawing includes non-English language text). S10Providing substrate S12Plating metal mask on gate surface S13Removing barrier layer from metal mask S14Forming dielectric layer in region uncovered by barrier layer S15Removing barrier layer to expose source electrode and drain electrode S16Forming conductive gas-sensitive layer on source electrode, drain electrode and dielectric layer