▎ 摘　　要

NOVELTY - A donor group/acceptor group-containing polymer-covalent-modified graphene material, is new. USE - New donor group/acceptor group-containing polymer-covalent-modified graphene material used in tri-state resistive memory device (claimed). ADVANTAGE - The compound (I) provides device having excellent stability. The device can be prepared in a large area by simple and economical method. When a different voltage is applied to the memory device, device exhibits three different resistance states, and its memory density increased from 2n to 3n, compared to a bistable device, and can store more information. DETAILED DESCRIPTION - A donor group/acceptor group-containing polymer-covalent-modified graphene material of formula (I), is new. The compound (I) has both donor and acceptor group. R = polymer PDQ; A = group of formula (i);and n = 21. INDEPENDENT CLAIMS are included for the following: (1) preparation of the compound (I); (2) polymer PDQ of formula (II); (3) preparation of the compound (II), which involves prepared by adding triphenylamine and N-bromosuccinimide to a carbon tetrachloride solution for reflux reaction, separating and purifying to obtain 4-bromo-N,N-diphenylaniline of formula (I-1), adding lithium bromide and cuprous bromide to tetrahydrofuran, premixing, adding Grignard reagent and compound (I-1) to tetrahydrofuran solution in drops under ice bath, adding oxalyl chloride, stirring and reacting, quenching with a saturated ammonium chloride solution, and purifying to obtain 1,2-bis(4-(diphenylamino)phenyl)ethane-1,2-dione (I-2), adding 1,2-diaminobenzene, thionyl chloride and triethylamine to dichloromethane for reaction, separating and purifying to obtain 2,1,3-benzothiadiazole of formula (I-3), dissolving compound (I-3) in hydrobromide solution, reacting with hydrobromide solution in which bromine dissolved in an ice bath, and purifying by separation to obtain 4,7-dibromo-2,1,3-benzothiadiazole of formula (I-4), dissolving compound (I-4) in ethanol under ice bath conditions adding sodium borohydride in drops to give 3,6-dibromocyclohexa-3,5-diene-1,2-diamine of formula (I-5), reacting compound (I-2) and compound (I-5) in acetic acid under nitrogen atmosphere, separating and purifying to obtain 4-(5,8-dibromo-3-(4-(diphenylamino)phenyl)quinoxalin-2-yl)-N,N-diphenylaniline of formula (I-6), and adding compound (I-6), cuprous iodide, triethylamine, 1,4-diynylbenzene and catalyst tetrakistriphenylphosphine palladium to dimethylformamide solvent for separation and purification; and (4) tri-state resistive memory device based on the graphene material, which comprises a bottom electrode, an active layer based on the polymer-modified graphene material, and an apex electrode.