▎ 摘　　要

NOVELTY - The method involves preparing a substrate (101) required for metal ion implantation. Silicon dioxide nanosphere transferring method is utilized to transfer silicondioxide nanosphere to a surface of the substrate. Vertical dry etching process is performed on the surface of the substrate by utilizing the silicon dioxide nanosphere as a mask. The silicon dioxide nanosphere on a top surface of the nano-pillar is removed from the surface of the substrate by utilizing deionized water ultrasound method. A graphene layer is fixed on the surface of the substrate by utilizing wet transfer method. Metal atoms are precipitated to the top surface of the nano-pillar. Metal nanoparticles are arranged on the surface of the substrate in a periodic manner. USE - Large-area metal nanoparticle array graphene-assisted preparation method. ADVANTAGE - The method enables utilizing graphene as a barrier to prevent evaporation of the metal atoms, performing periodic surface treatment to arrange the metal nanoparticles in a periodic manner, so that a metal nanoparticle array with adjustable structure arrangement is obtained, protecting prepared graphene by the metal nanoparticles so as to avoid contact with air, so that prolonged-term stability of the metal nanoparticles is ensured in an effective manner. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of a metal nanoparticle array. (Drawing includes non-English language text). Substrate (101)