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  • 专利标题:   High-sensitivity photoelectric detector, has silicon substrate provided with bismuth nano film that is fixed with single graphene layer, where height and diameter of bismuth nano film are in specific ranges.
  • 专利号:   CN106887484-A, CN106887484-B
  • 发明人:   JIN L, XIAO Y, ZHANG H, TANG X, ZHONG Z, LI J, LIAO Y, BAI F
  • 专利权人:   UNIV CHINA ELECTRONIC SCI TECHNOLOGY
  • 国际专利分类:   H01L031/032, H01L031/0352, H01L031/101, H01L031/18
  • 专利详细信息:   CN106887484-A 23 Jun 2017 H01L-031/101 201757 Pages: 5 Chinese
  • 申请详细信息:   CN106887484-A CN10237269 12 Apr 2017
  • 优先权号:   CN10237269

▎ 摘　　要

NOVELTY - The detector has a silicon substrate provided with a bismuth nano film that is fixed with a single graphene layer, where height of the bismuth nano film is 200-400nm and diameter of the bismuth nano film is 150-300nm. USE - High-sensitivity photoelectric detector. ADVANTAGE - The detector has high solar light illumination intensity, high detecting efficiency and wide application ranges. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a high-sensitivity photoelectric detector manufacturing method.