▎ 摘　　要

NOVELTY - The method involves forming (S100) silicon oxide (SiO2) on the silicon (Si) substrate and patterning the silicon oxide to expose a portion of the upper surface of the silicon substrate. The silicon oxide to expose a portion of the silicon oxide is patterned (S200). A metal layer on top of the graphene and silicon oxide is formed (S300) and the graphenes to expose a portion of the graphene is patterned. An insulating film on a portion of the metal layer formed on the upper portion of the graphene exposed is formed (S400). A another metal layer in a portion of the upper portion of the insulating film is formed (S500). USE - Method of manufacturing graphene element. ADVANTAGE - The function of suppressing the generation of the charge carrier due to the characteristic without band gap of graphene is achieved, and the output current saturation characteristic of the graphene element is improved. The output current saturation characteristic can be improved, and high-performance electric operation is enabled. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for an electric current saturation and the graphene device. DESCRIPTION OF DRAWING(S) - The drawing shows a flow chart illustrating the method of manufacturing graphene element. (Drawing includes non-English language text) Step for forming silicon oxide on the silicon substrate (S100) Step patterning silicon oxide to expose a portion of the silicon oxide (S200) Step for forming metal layer on top of the graphene and silicon oxide (S300) Step for forming insulating film on a portion of the metal layer formed on the upper portion of the graphene exposed (S400) Step for forming another metal layer in a portion of the upper portion of the insulating film (S500)