▎ 摘　　要

NOVELTY - A graphene radiating fin preparation method involves depositing silicon dioxide on a surface of a copper layer. Acetylene, hydrogen and argon gas are placed into a strong Black Magic deposition system reaction chamber. Graphene is grown on the surface of silicon dioxide. The copper layer is spin-coated with polymethyl methacrylate and corroded using ferric trichloride. The copper layer spin coated with the polymethyl methacrylate is transferred to a target graphene chip. The polymethyl methacrylate is removed using acetone to obtain the graphene radiating fin. USE - Method for preparing graphene radiating fin. ADVANTAGE - The method enables preparing graphene radiating fin with high specific surface area, high thermal conductivity, high thermal stability and high elasticity, in a simple and efficient manner. DETAILED DESCRIPTION - A graphene radiating fin preparation method involves depositing silicon dioxide on a surface of 1 micron thick copper layer using an electron beam evaporation method. Acetylene, hydrogen and argon gas are placed into a strong Black Magic deposition system reaction chamber and reacted at 900 degrees C for 5-10 minutes. Graphene is grown on the surface of silicon dioxide by a chemical vapor deposition process. The copper layer is spin-coated with 300 nm polymethyl methacrylate through a cooling treatment. The copper layer is corroded using 30% ferric trichloride for 20 minutes. The copper layer spin coated with the polymethyl methacrylate is transferred to a target graphene chip. The polymethyl methacrylate is removed using acetone to obtain the graphene radiating fin, where purity of the copper is 99.9%, and acetylene flow rate is 5-10 standard cubic centimeters per minute (sccm).